N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：447.47 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：447.47 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH™III MOSFET

ST

意法半导体

N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：634.24 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：634.24 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体