100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

文件：616.78 Kbytes 页数：5 Pages

UMW

友台半导体

100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

文件：583.94 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET

文件：458.84 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

文件：583.94 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

文件：616.78 Kbytes 页数：5 Pages

UMW

友台半导体