GaN HEMT 50V, 600W,2.1-2.2GHz RF Power Transistor

Description The STCV22603BY4 is a dual path 600watt , Input matched GaN HEMT, ideal for applications from 2.1 to 2.2GHz especially for LTE/5G There is no guarantee of performance when this part is used outside of stated frequencies. Applications  Asymmetrical Doherty amplifier within 2.1-2

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INNOGRATION

远创达

烧录器

STCSTCmicro Technology Co,.Ltd

宏晶科技北京宏晶科技有限公司

上传：深圳市秉祺电子科技有限公司

TO-3P

Sanken

三垦

上传：深圳市恒达亿科技有限公司

TO-252

ST

上传：深圳市轩嘉盛电子有限公司

TO-252

ST

上传：瀚佳科技(深圳)有限公司