GaN HEMT 50V, 600W,2.1-2.2GHz RF Power Transistor

Description The STCV22603BY4 is a dual path 600watt , Input matched GaN HEMT, ideal for applications from 2.1 to 2.2GHz especially for LTE/5G There is no guarantee of performance when this part is used outside of stated frequencies. Applications  Asymmetrical Doherty amplifier within 2.1-2

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INNOGRATION

远创达

TO-3P

SANKEN

三垦

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TO-252

ST

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DAPK

ST

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SOT323

AUK

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