Gallium Nitride 50V, 1000W, 1.9-2.0GHz RF Power Transistor

Description The STCV201K0CY4V is a 1000-watt, internally matched GaN HEMT, designed for 5G cellular applications with frequencies from 1.9-2.0GHz, enabled by wide band VBW capability to support IBW up to 100MHz.. It can be configured as asymmetrical Doherty for 4G or 5G application, delivering

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INNOGRATION

远创达

TO-3P

SANKEN

三垦

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TO-252

ST

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DAPK

ST

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SOT323

AUK

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