Gallium Nitride 50V, 1000W, 1.9-2.0GHz RF Power Transistor

Description The STCV201K0CY4V is a 1000-watt, internally matched GaN HEMT, designed for 5G cellular applications with frequencies from 1.9-2.0GHz, enabled by wide band VBW capability to support IBW up to 100MHz.. It can be configured as asymmetrical Doherty for 4G or 5G application, delivering

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INNOGRATION

远创达

烧录器

STCSTCmicro Technology Co,.Ltd

宏晶科技北京宏晶科技有限公司

上传：深圳市秉祺电子科技有限公司

TO-3P

Sanken

三垦

上传：深圳市恒达亿科技有限公司

TO-252

ST

上传：深圳市轩嘉盛电子有限公司

TO-252

ST

上传：瀚佳科技(深圳)有限公司