STB60NE06-16中文资料意法半导体数据手册PDF规格书

DESCRIPTION

This Power Mosfet is the latest development of SGS-THOMSON unique ” Single Feature Siz™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.013 Ω

■ EXCEPTIONAL dV/dt CAPABILTY

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE 100 oC

■ HIGH dV/dt CAPABILITY

■ APPLICATION ORIENTED CHARACTERIZATION

■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

■ SYNCHRONOUS RECTIFICATION