STB3NC90中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 3.2Ω

■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES

■ 100 AVALANCHE TESTED

■ VERY LOW GATE INPUT RESISTANCE

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT