STB25NM60N-1

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.17Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STB25NM60N-1

N-channel 600V - 0.140廓 - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET

STB25NM60N-1

N-channel 600 V, 0.130 廓 , 21 A, MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247

STB25NM60N-1

N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET