isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 110A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.9mΩ(Max)@ VGS= 10V DESCRIPTION · Switching Applications

文件：327.26 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package

Features • 100 avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c

文件：357.98 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

T1/CEPT/ISDN PRI INTERFACE TRANSFORMER

文件：26.05 Kbytes 页数：1 Pages

RHOMBUS-IND

N-Ch 100V Fast Switching MOSFETs

Features  Advanced Trench MOS Technology  100 EAS Guaranteed  Super Low RDS(ON)  Green Device Available Applications  MOTOR Driver.  BMS.  High frequency switching and synchronous rectification.

文件：487.7 Kbytes 页数：4 Pages

FETEK

台湾东沅

N-Ch 100V Fast Switching MOSFETs

Features Advanced Trench MOS Technology  100 EAS Guaranteed  Super Low RDS(ON)  Green Device Available Applications  MOTOR Driver.  BMS.  High frequency switching and synchronous rectification.

文件：447.8 Kbytes 页数：4 Pages

FETEK

台湾东沅

N-Ch 100V Fast Switching MOSFETs

Features Advanced Trench MOS Technology  100 EAS Guaranteed  Super Low RDS(ON)  Green Device Available Applications  MOTOR Driver.  BMS.  High frequency switching and synchronous rectification.

文件：478.91 Kbytes 页数：4 Pages

FETEK

台湾东沅