N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：673.16 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.34OHM - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET

文件：626 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.03995 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：673.16 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：673.16 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.34OHM - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET

文件：626 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.34OHM - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET

文件：626 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET

• Extremely high dv/dt capability\n• Gate charge minimized\n• 100% avalanche tested• Very good manufacturing repeatibility\n• Very low intrinsic capacitances;

ST

意法半导体