首页>STB12NK80Z_V01>规格书详情
STB12NK80Z_V01中文资料意法半导体数据手册PDF规格书
STB12NK80Z_V01规格书详情
Features
■ Extremely high dv/dt capability
■ Improved esd capability
■ 100 avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing reliability
Applications
■ Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in onresistance,
this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-263 |
87457 |
询价 | |||
ST |
2020+ |
I2SPAK |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST |
21+ |
TO-263 |
698 |
原装现货假一赔十 |
询价 | ||
ST |
2023+ |
I2SPAK |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ST |
16+ |
08+ |
2 |
原装现货假一罚十 |
询价 | ||
ST |
22 |
TO-263 |
25000 |
3月31原装,微信报价 |
询价 | ||
ST |
2018+ |
TO263 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
ST/意法 |
22+ |
TO-262 |
8700 |
原装现货 |
询价 | ||
ST/意法 |
2023+ |
TO-262 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 |
