STB10NB20中文资料意法半导体数据手册PDF规格书

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronis has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.30 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE