N-CHANNEL 30V - 0.0026 W -100A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：393.28 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

文件：461.83 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 30 V, 0.0026 Ohm typ., 100 A StripFET(TM) II Power MOSFET in a D2PAK package

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature SizeTM\\\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma Low threshold drive\nLogic level device\n100% avalanche tested;

ST

意法半导体

N-CHANNEL 30V - 0.0026 W -100A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：393.28 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

文件：461.83 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

文件：461.83 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

文件：461.83 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体