RF power transistor the LdmoST family,N-channel enhancement-mode lateral MOSFETs

Features ■ Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 μsec - 10 ■ Plastic package ■ In compliance with the 2002/95/EC european directive Description The STAP1011-180 is a common source N-channel enhancement-mode

文件：121.28 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Excellent Ruggedness

文件：524.22 Kbytes 页数：3 Pages

ASI

Unshielded radial leaded drum core inductors

文件：578.22 Kbytes 页数：4 Pages

EATON

伊顿

A/N

ST

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SMD

OPULENT

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