P Channel Enhancement Mode MOSFET

DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appl

文件：381.59 Kbytes 页数：7 Pages

STANSON

司坦森

P Channel Enhancement Mode MOSFET

DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appl

文件：381.59 Kbytes 页数：7 Pages

STANSON

司坦森

P Channel Enhancement Mode MOSFET

DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appl

文件：381.59 Kbytes 页数：7 Pages

STANSON

司坦森

P-Channel 30-V (D-S) MOSFET

文件：1.68709 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel MOSFET uses advanced trench technology

文件：1.51978 Mbytes 页数：5 Pages

DOINGTER

杜因特

P Channel Enhancement Mode MOSFET

文件：366.16 Kbytes 页数：6 Pages

STANSON

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Tranch MOSFET

Stanson

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Tranch MOSFET

Stanson

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