ST93CS66中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM)

fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection. A Read instruction loads the address of the first word to be read into an internal address pointer.

♦ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION

♦ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE

♦ READY/BUSY SIGNAL DURING PROGRAMMING

♦ SINGLE SUPPLY VOLTAGE

– 3V to 5.5V for the ST93CS66

– 2.5V to 5.5V for the ST93CS67

♦ USER DEFINED WRITE PROTECTED AREA

♦ PAGE WRITE MODE (4 WORDS)

♦ SEQUENTIAL READ OPERATION

♦ 5ms TYPICAL PROGRAMMING TIME

♦ ST93CS66 and ST93CS67 are replaced by the M93S66