ST93C66B6TR中文资料意法半导体数据手册PDF规格书

DESCRIPTION

This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10 and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66.

The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-THOMSON’s High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). The 4K bit memory is divided into either 512 x 8 bit bytes or 256 x 16 bit words. The organization may be selected by a signal applied on the ORG input.

■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION

■ DUAL ORGANIZATION: 256 x 16 or 512 x 8

■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE

■ READY/BUSY SIGNAL DURING PROGRAMMING

■ SINGLE SUPPLY VOLTAGE:

– 4.5V to 5.5V for ST93C66 version

– 3V to 5.5V for ST93C67 version

■ SEQUENTIAL READ OPERATION

■ 5ms TYPICAL PROGRAMMING TIME

■ ST93C66 and ST93C67 are replaced by the M93C66