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6601

ComfortProbewithRemovable4mmBananaPlugAdapter

POMONA

Pomona Electronics

POMONA

ADRF6601

750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

ADRF6601

1200MHzto3600MHzRxMixerwithIntegratedFractional-NPLLandVCO

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

ADRF6601-EVALZ

750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

AN-6601

LowNoiseJFETAmplifiers

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

AO6601

N-andP-ChannelV(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

AO6601

30VComplementaryMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AO6601

ComplementaryTrenchMOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

AO6601

NPChannelMOSFET

Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V)

UMWUMW

友台友台半导体

UMW

AO6601

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AO6601-HF

ComplementaryTrenchMOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

AO6601L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AWU6601

HELP3TMBand1/WCDMA/TD-SCDMA3.4V/28.25dBmLinearPAModule

ANADIGICS

ANADIGICS

ANADIGICS

CEB6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CEB6601

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

CED6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CED6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEM6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CEM6601

P-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

CEM6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

晶体管资料

  • 型号:

    ST6601

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    通用 (G)

  • 封装形式:

    直插封装

  • 极限工作电压:

    50V

  • 最大电流允许值:

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    3DG130D,

  • 最大耗散功率:

    0.8W

  • 放大倍数:

  • 图片代号:

    D-77

  • vtest:

    50

  • htest:

    999900

  • atest:

    0

  • wtest:

    .8

供应商型号品牌批号封装库存备注价格
ST
2020+
SOP8
3000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MAXIM/美信
SOP8
6698
询价
BOURNS
2022+
SMD-1260
7300
原装现货
询价
ST
10+
DIP-8
7800
全新原装正品,现货销售
询价
ST
23+
SOP8
8820
全新原装优势
询价
ST
99+
SOP8
5000
询价
ST
22+
SMD-8
7500
十年品牌!原装现货!!!
询价
ST
2017+
SOP-8
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ST
16+
DIP8
8000
原装现货请来电咨询
询价
ST
2020+
DIP8
350000
100%进口原装正品公司现货库存
询价
更多ST6601供应商 更新时间2024-4-28 9:08:00