P Channel Enhancement Mode MOSFET

DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli

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STANSON

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ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appl

文件：582.36 Kbytes 页数：6 Pages

STANSON

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P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：490.53 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：501.68 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P Channel Enhancement Mode MOSFET

DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli

文件：343.61 Kbytes 页数：6 Pages

STANSON

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SOT-23 package design

DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage appl

文件：603.16 Kbytes 页数：7 Pages

STANSON

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N Channel Enhancement Mode MOSFET

DESCRIPTION ST2342 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli

文件：300.44 Kbytes 页数：6 Pages

STANSON

司坦森

N Channel Enhancement Mode MOSFET

DESCRIPTION ST2342 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli

文件：300.44 Kbytes 页数：6 Pages

STANSON

司坦森

4-bit dual supply level translator without direction control pin

Description The ST2349 is a 4-bit dual supply level translator which provides the level shifting capability to allow data transfer in a multi-voltage system. Externally applied voltages, VCC and VL, set the logic levels on either side of the device. It utilizes transmission gate-based design that

文件：416.34 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

4-bit dual supply level translator without direction control pin

Description The ST2349A is a 4-bit dual supply level translator which provides the level shifting capability to allow data transfer in a multi-voltage system. Externally applied voltages, VCC and VL, set the logic levels on either side of the device. It utilizes transmission gate-based design tha

文件：413.94 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体