ST03D-200

Trankiller

Power-Clamper Features •PowerZenerDiodeswithFRD •AxialPackage •Applicationforsnubbercircuit

ST03D-82

Trankiller

Power-Clamper Features •PowerZenerDiodeswithFRD •AxialPackage •Applicationforsnubbercircuit

ST04-16

Trankiller

Trankiller

ST04-16F1

Trankiller

Trankiller

ST04-27

Trankiller

Trankiller

ST04-27F1

Trankiller

Trankiller

ST05250

250 W, 28/32 V, HF to 1 GHz, RF Power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Incompliancewiththeeuropeandirective2002/95/EC Description TheST05250isa250W,28/32VLDMOSFETs,designed

ST0541D4

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

ST06LT4

N-channel 60 V, 70 mΩ typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features Exceptionaldv/dtcapability 100%avalanchetested Lowgatecharge Applications Switchingapplications Description ThisPowerMOSFETserieshasbeendevelopedusingSTMicroelectronics'unique STripFET™process,whichisspecificallydesignedtominimizeinputcapacitance

ST080S02P

20 STERN ave.

ThyristorsSCR