SSW2N80A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:25μA(Max.)@VDS=800V ■LowRDS(ON):4.688Ω(Typ.)

SSW2N80A

isc N-Channel MOSFET Transistor

2N80

2Amps,800VoltsN-CHANNELPOWERMOSFET

2N80

2A,800VN-CHANNELPOWERMOSFET

2N80

DrainCurrentID=2.4A@TC=25C

2N80-C

2.0A,800VNHANNELPOWERMOSFET

DESCRIPTION TheUTC2N80-CprovideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. FEATURES0 *RDS(ON)≤5.6Ω@VGS=10V,ID=1.0A *LowReverseTransferCapacitance *FastSwitchingCapab

2N80G-TND-R

N-CHANNELPOWERMOSFET

2N80L-TND-R

N-CHANNELPOWERMOSFET

2N80Z

2A,800VN-CHANNELPOWERMOSFET

2N80Z

PowerMOSFET