TIP121

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithTIP125,TIP126andTIP127 ●65Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●MinimumhFEof1000at3V,3A

TIP121

DARLINGTON5AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium-PowerComplementarySiliconTransistors ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@100mAdc VCEO(sus)=60Vdc(Min)—TIP12

TIP121

POWERTRANSISTORS(5.0A,60-100V,65W)

...designedforgeneral−purposeamplifierandlow−speedswitchingapplications. FEATURES: •Collector−EmitterSustainingVoltage− VCEO(sus)=60V(Min)−TIP120,TIP125 =80V(Min)−TIP121,TIP126 =100V(Min)−TIP122,TIP127 •LowColl

TIP121

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■Comp

TIP121

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP125/126/127 APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications.

TIP121

DarlingtonTransistors

[SGS] POWERDARLINGTONS TheTIP120,TIP121andTIP122aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationinJedecTO-220plasticpackage,intendedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesaretheTIP125,TIP126andTIP127res

TIP121

Si-EpitaxialPlanarDarlingtonPowerTransistors

TIP121

DarlingtonPowerTransistors(NPN)

Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant

TIP121

PlasticMedium-PowerComplementarySiliconTransistors

TIP121

Plastic-EncapsulatedTransistors