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STTH506

Turbo2ultrafast-highvoltagerectifier

Description TheSTTH506usesSTTurbo2600Vtechnology.Thisdeviceisspeciallysuitedforuseinswitchingpowersupplies,andindustrialapplications. Featuresandbenefits ■Ultrafastswitching ■Lowreversecurrent ■Lowthermalresistance ■Reducesconductionandswitchin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STTH506B

Turbo2ultrafast-highvoltagerectifier

Description TheSTTH506usesSTTurbo2600Vtechnology.Thisdeviceisspeciallysuitedforuseinswitchingpowersupplies,andindustrialapplications. Featuresandbenefits ■Ultrafastswitching ■Lowreversecurrent ■Lowthermalresistance ■Reducesconductionandswitchin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STTH506B

UltrafastRecoveryRectifier

FEATURES ·UltrafastRecoveryTime ·LowForwardVoltage ·LowLeakageCurrent ·175℃OperatingJunctionTemperature ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpowersupplies ·Powerswitchingcircuits ·Generalpurpose

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STTH506B

5.0AmpereSurfaceMountSinglePositiveTypeUltraFastRecoveryRectifierDiode

Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPower

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

STTH506B-TR

Turbo2ultrafast-highvoltagerectifier

Description TheSTTH506usesSTTurbo2600Vtechnology.Thisdeviceisspeciallysuitedforuseinswitchingpowersupplies,andindustrialapplications. Featuresandbenefits ■Ultrafastswitching ■Lowreversecurrent ■Lowthermalresistance ■Reducesconductionandswitchin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STTH506D

Turbo2ultrafast-highvoltagerectifier

Description TheSTTH506usesSTTurbo2600Vtechnology.Thisdeviceisspeciallysuitedforuseinswitchingpowersupplies,andindustrialapplications. Featuresandbenefits ■Ultrafastswitching ■Lowreversecurrent ■Lowthermalresistance ■Reducesconductionandswitchin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STTH506DTI

Tandem600VHYPERFASTBOOSTDIODE

DESCRIPTION TheTURBOSWITCH“H”isanultrahighperformancediodecomposedoftwo300Vdiceinseries.TURBOSWITCH“H”familydrasticallycutslossesintheassociatedMOSFETwhenrunathighdIF/dt. ■ESPECIALLYSUITEDASBOOSTDIODEINCONTINUOUSMODEPOWERFACTORCORRECTORSANDHARDSWITCHIN

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STTH506FP

Turbo2ultrafast-highvoltagerectifier

Description TheSTTH506usesSTTurbo2600Vtechnology.Thisdeviceisspeciallysuitedforuseinswitchingpowersupplies,andindustrialapplications. Featuresandbenefits ■Ultrafastswitching ■Lowreversecurrent ■Lowthermalresistance ■Reducesconductionandswitchin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STTH506TTI

Tandem600VHYPERFASTRECTIFIER

DESCRIPTION TheTURBOSWITCH“H”isanultrahighperformancediodecomposedoftwo300Vdiceinseries.TURBOSWITCH“H”familydrasticallycutslossesintheassociatedMOSFETwhenrunathighdIF/dt. FEATURESANDBENEFITS ■ESPECIALLYSUITEDASBOOSTDIODEINCONTINUOUSMODEPOWERFACTORCORRE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

SUR506EF

EpitaxialPlanarTypePNPSiliconTransistor

Descriptions •Digitaltransistor Features •TwoSRA2205chipsinSOT-563Fpackage •Withbuilt-inbiasresistors

AUK

AUK

SUR506EF

EpitaxialplanarPNPsilicontransistor

Descriptions •Dualchipdigitaltransistor Features •TwoSRA2205chipsinSOT-563Fpackage •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess

KODENSHIKodenshi Group

可天士可天士光电子集团

SVND-M506GT

EinteiligeUniversalarmaturgerade,metrischOne-pieceUniversalConnectionstraight,metric

ABB

ABB集团ABB(中国)有限公司

SZ506C

SURFACEMOUNTSILICONZENERDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SZ506C

3W6.2VZenerdiode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SZ506C

SURFACEMOUNTSILICONZENERDIODES

EIC

EIC

SZ506C

SURFACEMOUNTSILICONZENERDIODES

EIC

EIC

SZ506I

SURFACEMOUNTSILICONZENERDIODES

EIC

EIC

SZ506I

3W6.8VZenerdiode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SZ506I

SURFACEMOUNTSILICONZENERDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SZ506I

SURFACEMOUNTSILICONZENERDIODES

EIC

EIC

详细参数

  • 型号:

    SST506

  • 功能描述:

    稳流二极管 1.4mA Current Reg

  • RoHS:

  • 制造商:

    Central Semiconductor

  • 最大调节器电流:

    5.17 mA

  • 最大极限电压:

    2.9 V

  • 最大峰值工作电压:

    100 V

  • 安装风格:

    Through Hole

  • 封装/箱体:

    DO-204AH

供应商型号品牌批号封装库存备注价格
SILICONIX
13+
SOT-23
7500
特价热销现货库存
询价
SILICONIX
SOT-23
2300
询价
SILICONIX
2020+
原厂封装
350000
100%进口原装正品公司现货库存
询价
SILICONIX
22+
SOT-23
8200
原装现货库存.价格优势
询价
VISHAY
2023+
SOT-23
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
VISHAY/威世
21+
SOT-23
15000
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
询价
Vishay
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
VISHAY
2024+
SOT-23
50000
原装现货
询价
VISHAY
2016+
SOT-23
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
VISHAY
2016+
CHIP-6L
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
更多SST506供应商 更新时间2024-6-18 14:10:00