SST39VF3201C集成电路（IC）的存储器规格书PDF中文资料

SST39VF3201C属于集成电路（IC）的存储器。由美国微芯科技公司制造生产的SST39VF3201C存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

特性 Features

• Organized as 2M x16

• Single Voltage Read and Write Operations:

- 2.7V-3.6V

• Superior Reliability:

- Endurance: 100,000 Cycles (Typical)

- Greater than 100 years Data Retention

• Low-Power Consumption (typical values at

5 MHz):

- Active Current: 6 mA (typical)

- Standby Current: 4 μA (typical)

- Auto Low-Power Mode: 4 μA (typical)

• Hardware Block Protection/WP# Input Pin:

- Top Block Protection (top two 4-KWord

blocks)

for SST39VF3202C

- Bottom Block-Protection (bottom two 4-

KWord blocks) for SST39VF3201C

• Sector-Erase Capability:

- Uniform 2 KWord sectors

• Block-Erase Capability:

- Flexible block architecture

- Eight 4-KWord blocks, 63 32-KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Security-ID Feature:

- Microchip: 128 bits; User: 128 words

• Fast Read Access Time:

- 70 ns

• Latched Address and Data

• Fast Erase and Word-Program:

- Sector-Erase Time: 18 ms (typical)

- Block-Erase Time: 18 ms (typical)

- Chip-Erase Time: 35 ms (typical)

- Word-Program Time: 7 μs (typical)

• Automatic Write Timing:

- Internal VPP Generation

• End-of-Write Detection:

- Toggle Bits

- Data# Polling

- RY/BY# Pin

• CMOS I/O Compatibility

• JEDEC Standard:

- Flash EEPROM Pin Assignments

• Packages Available:

- 48-lead TSOP (12 mm x 20 mm)

- 48-ball TFBGA (6 mm x 8 mm)

• All devices are RoHS compliant