Features

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 30 μA (typical)

• Sector-Erase Capability

– Uniform 4 KByte sectors

• Fast Read Access Time:

– 55 ns

– 70 ns

• Latched Address and Data

• Automatic Write Timing

– Internal VPP Generation

• Fast Erase and Byte-Program

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 μs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

• All devices are RoHS compliant

SST39SF010A-55-4C-NHE属于集成电路（IC） > 存储器。微芯科技股份有限公司制造生产的SST39SF010A-55-4C-NHE存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。