SST38VF6404B集成电路（IC）的存储器规格书PDF中文资料

SST38VF6404B属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的SST38VF6404B存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description

The SST38VF6401B, SST38VF6402B, SST38VF6403B,

and SST38VF6404B devices are 4M x16 CMOS

Advanced Multi-Purpose Flash Plus (Advanced MPF+)

manufactured with Microchip proprietary, high-performance

CMOS SuperFlash technology. The split-gate cell

design and thick-oxide tunneling injector attain better reliability

and manufacturability compared with alternate

approaches. The SST38VF6401B/6402B/6403B/6404B

write (Program or Erase) with a 2.7-3.6V power supply.

These devices conform to JEDEC standard pin assignments

for x16 memories.

Featuring high performance Word-Program, the

SST38VF6401B/6402B/6403B/6404B provide a typical

Word-Program time of 7 μsec. For faster word-programming

performance, the Write-Buffer Programming

feature, has a typical word-program time of 1.75 μsec.

These devices use Toggle Bit, Data# Polling, or the RY/

BY# pin to indicate Program operation completion. In

addition to single-word Read, Advanced MPF+ devices

provide a Page-Read feature that enables a faster

word read time of 25 ns, eight words on the same page.

To protect against inadvertent write, the

SST38VF6401B/6402B/6403B/6404B have on-chip

hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum

of applications, these devices are available with

100,000 cycles minimum endurance. Data retention is

rated at greater than 100 years.

The SST38VF6401B/6402B/6403B/6404B are suited for

applications that require the convenient and economical

updating of program, configuration, or data memory.

For all system applications, Advanced MPF+

significantly improve performance and reliability, while

lowering power consumption. These devices inherently

use less energy during Erase and Program than alternative

flash technologies. The total energy consumed

is a function of the applied voltage, current, and time of

application. For any given voltage range, the Super-

Flash technology uses less current to program and has

a shorter erase time; therefore, the total energy consumed

during any Erase or Program operation is less

than alternative flash technologies.

These devices also improve flexibility while lowering

the cost for program, data, and configuration storage

applications. The SuperFlash technology provides

fixed Erase and Program times, independent of the

number of Erase/Program cycles that have occurred.

Therefore, the system software or hardware does not

have to be modified or de-rated as is necessary with

alternative flash technologies, whose Erase and Program

times increase with accumulated Erase/Program cycles.

The SST38VF6401B/6402B/6403B/6404B also offer

flexible data protection features. Applications that

require memory protection from program and erase

operations can use the Boot Block, Individual Block

Protection, and Advanced Protection features. For

applications that require a permanent solution, the Irreversible

Block Locking feature provides permanent

protection for memory blocks.

Features

• Organized as 4M x16

• Single Voltage Read and Write Operations

- 2.7-3.6V

• Superior Reliability

- Endurance: 100,000 Cycles minimum

- Greater than 100 years Data Retention

• Low Power Consumption (typical values at 5 MHz)

- Active Current: 25 mA (typical)

- Standby Current: 5 μA (typical)

- Auto Low Power Mode: 5 μA (typical)

• 128-bit Unique ID

• Security-ID Feature

- 248 Word, user One-Time-Programmable

• Protection and Security Features

- Hardware Boot Block Protection/WP# Input Pin,

Uniform (32 KWord), and Non-Uniform

(8 KWord) options available

- User-controlled individual block (32 KWord) protection,

using software only methods

- Password protection

• Hardware Reset Pin (RST#)

• Fast Read and Page Read Access Times:

- 70 ns Read access time

- 25 ns Page Read access times

- 8-Word Page Read buffer

• Latched Address and Data

• Fast Erase Times:

- Block-Erase Time: 18 ms (typical)

- Chip-Erase Time: 40 ms (typical)

• Erase-Suspend/-Resume Capabilities

• Fast Word and Write-Buffer Programming Times:

- Word-Program Time: 7 μs (typical)

- Write Buffer Programming Time: 1.75 μs / Word

(typical)

- 16-Word Write Buffer

• Automatic Write Timing

- Internal VPP Generation

• End-of-Write Detection

- Toggle Bits

- Data# Polling

- RY/BY# Output

• CMOS I/O Compatibility

• JEDEC Standard

- Flash EEPROM Pinouts and command sets

• CFI Compliant

• Packages Available

- 48-lead TSOP

- 48-ball TFBGA

• All non-Pb (lead-free) devices are RoHS compliant