SST38LF6401RT中文资料64-Mbit (x16) Radiation Tolerant Flash数据手册Microchip规格书

描述 Description

The SST38VF6401RT is a4M x16, Radiation Tolerant device manufactured with Microchip’s proprietary,high-performance CMOS Super-Flash technology. The split-gate cell design andthick-oxide tunneling injector attain better reliability and manufacturabilitycompared with alternate approaches. This process achieves an unbiased 100Kradof radiation tolerance. The SST38VF6401RT writes (Program or Erase) with a 3.0to 3.6V power supply and conforms to JEDEC standard pinouts and command setsfor x16 flash memories.

特性 Features

Main Characteristics
• Organized as 4M x16
• Superior Reliability : Endurance: up to 10,000 Cycles minimum / Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz) : Active Current: 4 mA (typical) / Standby Current: 3 µA (typical) / Auto Low Power Mode: 3 µA (typical)
• Security-ID Feature : 256 Word, user One-Time-Programmable / 128-bit Unique ID
• Protection and Security Features : Hardware Boot Block Protection/WP# Input Pin,Uniform (32 KWord) and Non-Uniform (8 KWord) options available / User-controlled individual block (32 KWord) protection,using software only methods / Password protection
• Hardware Reset Pin (RST#)
• Fast Read and Page Read Access Times:90 ns Read access time / 25 ns Page Read access times / 4-Word Page Read buffer
• Latched Address and Data
• Fast Erase Times: Sector-Erase Time: 18 ms (typical) / Block-Erase Time: 18 ms (typical) / Chip-Erase Time: 40 ms (typical)
• Erase-Suspend/-Resume Capabilities
• Fast Word and Write-Buffer ProgrammingTimes: Word-Program Time: 7 µs (typical) / Write Buffer Programming Time: 1.75 µs Word(typical) / 16-Word Write Buffer
• Automatic Write Timing : Internal VPP Generation
• End-of-Write Detection : Toggle Bits / Data# Polling / RY/BY# Output
• CMOS I/O Compatibility
• JEDEC Standard: Flash EEPROM Pinouts and command sets
• CFI Compliant
Voltage
• Single Voltage Read and Write Operations 3.0-3.6V
Radiation Performances
• No Single Event Latch-up Below a LET Threshold of 78 MeV.cm2 /mg @125°C
• SEU Rate60 MeV.cm2 /mg (LET)
• Total ionizing dose of 50kRad (Biased) / 100kRad (Unbiased)
Packages
• 48-lead TSOP
• 48-lead Ceramic dual flat pack