SST37VF010-70-3C-WH中文资料SST数据手册PDF规格书

PRODUCT DESCRIPTION

The SST37VF512/010/020/040 devices are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS, Many-Time Programmable (MTP), low cost flash, manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST37VF512/010/020/040 can be electrically erased and programmed at least 1000 times using an external programmer, e.g., to change the contents of devices in inventory. The SST37VF512/010/020/040 have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide flash memories.

FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• 2.7-3.6V Read Operation

• Superior Reliability

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 10 mA (typical)

– Standby Current: 2 µA (typical)

• Fast Read Access Time:

– 70 ns

– 90 ns

• Latched Address and Data

• Fast Byte-Program Operation:

– Byte-Program Time: 10 µs (typical)

– Chip Program Time:

0.6 seconds (typical) for SST37VF512

1.2 seconds (typical) for SST37VF010

2.4 seconds (typical) for SST37VF020

4.8 seconds (typical) for SST37VF040

• Electrical Erase Using Programmer

– Does not require UV source

– Chip-Erase Time: 100 ms (typical)

• CMOS I/O Compatibility

• JEDEC Standard Byte-wide Flash EEPROM Pinouts

• Packages Available

– 32-pin PLCC

– 32-pin TSOP (8mm x 14mm)

– 32-pin PDIP