16 Megabit Concurrent SuperFlash

PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

文件：265.65 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

16 Megabit Concurrent SuperFlash

PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

文件：265.65 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

16 Megabit Concurrent SuperFlash

PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

文件：265.65 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

16 Megabit Concurrent SuperFlash

PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

文件：265.65 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

16 Megabit Concurrent SuperFlash

PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

文件：265.65 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

16 Megabit Concurrent SuperFlash

PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

文件：265.65 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

16 Megabit Concurrent SuperFlash

PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

文件：265.65 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

16 Megabit Concurrent SuperFlash

PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

文件：265.65 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

16 Megabit Concurrent SuperFlash

PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

文件：265.65 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

16 Mbit (x8/x16) Dual-Bank Flash Memory

PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability

文件：422.01 Kbytes 页数：34 Pages

SST

Silicon Storage Technology, Inc