SST29VF040-70-4C-NHE中文资料SST数据手册PDF规格书

PRODUCT DESCRIPTION

The SST29SF512/010/020/040 and SST29VF512/010/ 020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29SFxxx devices write (Program or Erase) with a 4.5-5.5V power supply. The SST29VFxxx devices write (Program or Erase) with a 2.7- 3.6V power supply. These devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations

– 5.0V-only for SST29SF512/010/020/040

– 2.7-3.6V for SST29VF512/010/020/040

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 10 mA (typical)

– Standby Current:

30 µA (typical) for SST29SF512/010/020/040

1 µA (typical) for SST29VF512/010/020/040

• Sector-Erase Capability

– Uniform 128 Byte sectors

• Fast Read Access Time:

– 55 ns

– 70 ns

• Latched Address and Data

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

1 second (typical) for SST29SF/VF512

2 seconds (typical) for SST29SF/VF010

4 seconds (typical) for SST29SF/VF020

8 seconds (typical) for SST29SF/VF040

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility for SST29SFxxx

• CMOS I/O Compatibility for SST29VFxxx

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-pin PLCC

– 32-pin TSOP (8mm x 14mm)

– 32-pin PDIP