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型号	下载订购	功能描述	制造商上传企业	LOGO
SST29LE010-200-4I-PH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-200-4I-UH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-200-4I-WH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-250-4C-EH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-250-4C-NH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-250-4C-PH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-250-4C-UH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-250-4C-WH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-250-4I-EH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-250-4I-NH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST

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详细参数

型号：
SST29LE010
制造商：
SST
制造商全称：
Silicon Storage Technology, Inc
功能描述：
1 Megabit(128K x8) Page-Mode EEPROM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福田区绿盛电子商行	SST29LE010	SST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市利加科技有限公司	SST29LE010	SST	16+	NA	8800	原装现货,货真价优	询价
深圳市卓越微芯电子有限公司	SST29LE010	SST	25+	PLCC	5000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市壹芯创科技有限公司	SST29LE010	SST	22+	PLCC	8000	原装现货库存.价格优势	询价
北京逸博微科技有限公司	SST29LE010	SST	20+		1562	全新现货热卖中欢迎查询	询价
深圳市赛美科科技有限公司	SST29LE010	SST		PLCC	68500	一级代理原装正品假一罚十价格优势长期供货	询价
上海凌岳电子科技有限公司（上海涵恩科技）	SST29LE010	SST	2023+		3000	进口原装现货	询价
天津市博通航睿技术有限公司	SST29LE010	SST	1136		20	优势货源原装正品	询价
深圳市科达星科技有限公司	SST29LE010	SST	24+		6000	原装现货,特价销售	询价
芯有半导体（深圳）有限公司	SST29LE010-150-4C-NH	SST	00/01+	PLCC	315	全新原装100真实现货供应	询价

更多SST29LE010供应商更新时间2026-1-21 16:40:00

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