SST29LE010-150-4C-UH规格书应用电路贸易商-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
SST29LE010-150-4C-EH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-150-4C-NH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-150-4C-PH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-150-4C-UH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-150-4C-WH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-150-4I-EH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-150-4I-NH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-150-4I-PH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-150-4I-UH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010-150-4I-WH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna 文件：326.37 Kbytes 页数：26 Pages	SST Silicon Storage Technology, Inc	SST

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市龙腾翼电子科技有限公司	SST29LE010-150-4I	SST	2013	PLCC	800	全新	询价
深圳市科芯源微电子有限公司	SST29LE010-150-4I	SST	2026+	SOP	996880	只做原装,欢迎来电资询	询价
深圳诚思涵科技有限公司	SST29LE010-150-4I	SST	24+	SOP	39244	只做原装公司现货库存	询价
深圳市澳亿芯电子科技有限公司	SST29LE010-150-4I	SST	24+	SOP	12000	原装正品有挂就有货	询价
深圳市华康联电子科技有限公司	SST29LE010-150-4I	SST	23+	SOP	98900	原厂原装正品现货!!	询价
瀚佳科技(深圳)有限公司	SST29LE010-150-4I-EH	SST	24+	TSOP	36520	一级代理/放心采购	询价
深圳市益百分电子有限公司	SST29LE010-150-4I-NH	SST	PLCC32	0434+	1019	全新原装进口自己库存优势	询价
深圳市一线半导体有限公司	SST29LE010-150-4I-NH	SST	24+	PLCC-32	4		询价
深圳市卓越微芯电子有限公司	SST29LE010-150-4I-NH	SST	25+	PLCC	346	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市壹芯创科技有限公司	SST29LE010-150-4I-NH	SST	22+	PLCC	8000	原装现货库存.价格优势	询价

更多SST29LE010-150供应商更新时间2026-2-10 8:01:00

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