SST29EF010-120-4C-NH中文资料SST数据手册PDF规格书

PRODUCT DESCRIPTION

The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE020 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/LE/VE020 conform to JEDEC standard pinouts for byte-wide memories.

FEATURES:

• Single Voltage Read and Write Operations

– 5.0V-only for SST29EE020

– 3.0-3.6V for SST29LE020

– 2.7-3.6V for SST29VE020

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical) for 5V and

10 mA (typical) for 3.0/2.7V

– Standby Current: 10 µA (typical)

• Fast Page-Write Operation

– 128 Bytes per Page, 2048 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 10 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

• Fast Read Access Time

– 5.0V-only operation: 120 and 150 ns

– 3.0-3.6V operation: 200 and 250 ns

– 2.7-3.6V operation: 200 and 250 ns

• Latched Address and Data

• Automatic Write Timing

– Internal VPP Generation

• End of Write Detection

– Toggle Bit

– Data# Polling

• Hardware and Software Data Protection

• Product Identification can be accessed via

Software Operation

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)

– 32-pin PDIP