SST29EE010A-120-4C-N中文资料SST数据手册PDF规格书

PRODUCT DESCRIPTION

The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE010A/29LE010A/29VE010A write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE010A/29LE010A/29VE010A conform to JEDEC standard pinouts for bytewide memories.

FEATURES:

• Single Voltage Read and Write Operations

– 5.0V-only for the SST29EE010A

– 3.0-3.6V for the SST29LE010A

– 2.7-3.6V for the SST29VE010A

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V

– Standby Current: 10 µA (typical)

• Fast Page Write Operation

– 128 Bytes per Page, 1024 Pages

– Page Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 5 sec (typical)

– Effective Byte Write Cycle Time: 39 µs (typical)

• Fast Read Access Time

– 5.0V-only operation: 90 and 120 ns

– 3.0-3.6V operation: 150 and 200 ns

– 2.7-3.6V operation: 200 and 250 ns

• Latched Address and Data

• Automatic Write Timing

– Internal VPP Generation

• End of Write Detection

– Toggle Bit

– Data# Polling

• Hardware and Software Data Protection

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32 Pin PDIP

– 32-Pin PLCC

– 32-Pin TSOP (8mm x 20mm & 8mm x 14mm)