1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

文件：326.37 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

文件：882.72 Kbytes 页数：27 Pages

SST

Silicon Storage Technology, Inc

1 Megabit (128K x8) Page-Mode EEPROM

文件：267.81 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件：458.14 Kbytes 页数：30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

SST

超捷

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

文件：326.37 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

文件：326.37 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

文件：326.37 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

文件：326.37 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

文件：326.37 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc