Product Description

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that allows for

low-power, high-performance operation in a low pin-count

package. SST26WF040B/040BA and SST26WF080B/

080BA also support full command-set compatibility to traditional

Serial Peripheral Interface (SPI) protocol. System

designs using SQI flash devices occupy less board space

and ultimately lower system costs.

All members of the 26 Series, SQI family are manufactured

with proprietary, high-performance CMOS SuperFlash®

technology. The split-gate cell design and thick-oxide tunneling

injector attain better reliability and manufacturability

compared with alternate approaches.

The SST26WF040B/040BA and SST26WF080B/

080BA significantly improves performance and reliability,

while lowering power consumption. This device

writes (Program or Erase) with a single power supply of

1.65-1.95V. The total energy consumed is a function of

the applied voltage, current, and time of application.

Since for any given voltage range, the SuperFlash

technology uses less current to program and has a

shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash memory technologies.

SST26WF040B/040BA and SST26WF080B/080BA is

offered in 8-contact WDFN (6 mm x 5 mm), 8-lead SOIC

(150 mil), 8-contact USON, and 8-ball XFBGA (Z-Scale™)

packages. See Figure 2-1 for pin assignments.

Two configurations are available upon order:

SST26WF040B and SST26WF080B default at powerup

has the WP# and Hold# pins enabled and

SST26WF040BA and SST26WF080BA default at

power-up has the WP# and Hold# pins disabled.

Features

• Single Voltage Read and Write Operations

- 1.65-1.95V

• Serial Interface Architecture

- Mode 0 and Mode 3

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

• High Speed Clock Frequency

- 104 MHz max

• Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

• Superior Reliability

- Endurance: 100,000 Cycles (min)

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby current: 10 μA (typical)

- Deep Power-Down current: 1.8 μA (typical)

• Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25 ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

- Software polling the BUSY bit in status register

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

• Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection

- Individual-Block Write Protection with permanent

lock-down capability

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

- Read Protection on top and bottom 8 KByte

parameter blocks

• Security ID

- One-Time Programmable (OTP) 2 KByte,

Secure ID

- 64 bit unique, factory pre-programmed identifier

- User-programmable area

• Temperature Range

- Industrial: -40°C to +85°C

• Packages Available

- 8-contact WDFN (6mm x 5mm)

- 8-lead SOIC (150 mil)

- 8-contact USON (2mm x 3mm)

- 8-ball XFBGA (Z-Scale™)

• All devices are RoHS compliant

SST26WF040BA-104I/SN属于集成电路（IC） > 存储器。微芯科技股份有限公司制造生产的SST26WF040BA-104I/SN存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。