Product Description

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that allows for

low-power, high-performance operation in a low pin-count

package. SST26VF032BEUI also support full command-set

compatibility to traditional Serial Peripheral Interface (SPI)

protocol. System designs using SQI flash devices occupy

less board space and ultimately lower system costs.

All members of the 26 Series, SQI family are manufactured

with proprietary, high-performance CMOS SuperFlash®

technology. The split-gate cell design and thick-oxide tunneling

injector attain better reliability and manufacturability

compared with alternate approaches.

SST26VF032BEUI significantly improve performance and

reliability, while lowering power consumption. These devices

write (Program or Erase) with a single power supply of 2.3-

3.6V. The total energy consumed is a function of the applied

voltage, current, and time of application. Since for any given

voltage range, the SuperFlash technology uses less current

to program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is less

than alternative flash memory technologies.

SST26VF032BEUI is offered in 8-lead SOIJ (5.28 mm).

See Figure 2-1 for pin assignments.

SST26VF032BEUI default at power-up has the WP#

and HOLD# pins enabled, and the SIO2 and SIO3

pins disabled, to initiate SPI-protocol operations.See

“I/O Configuration (IOC)” on page 11 for more

information about configuring WP#/HOLD# and SIO2/SIO3 pins.

Features

• Factory-Programmed with EUI-48 and EUI-64

Globally Unique Identifier

- Secure, read-only access in Serial Flash

Discoverable Parameter (SFDP) table

• Single Voltage Read and Write Operations

- 2.7-3.6V or 2.3-3.6V

• Serial Interface Architecture

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- Mode 0 and Mode 3

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

• High Speed Clock Frequency

- 2.7-3.6V: 104 MHz max

- 2.3-3.6V: 80 MHz max

• Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

• Superior Reliability

- Endurance: 100,000 Cycles (min)

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby Current: 15 μA (typical)

• Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25 ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

- Software polling the BUSY bit in status register

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

• Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection

- Individual-Block Write Protection with permanent

lock-down capability

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

- Read Protection on top and bottom 8 KByte

parameter blocks

• Security ID

- One-Time Programmable (OTP) 2 KByte, Secure ID

- 64 bit unique, factory pre-programmed identifier

- User-programmable area

• Temperature Range

- Industrial: -40°C to +85°C

• Automotive AECQ-100 Qualified

• Packages Available

- 8-lead SOIJ (5.28 mm)

• All devices are RoHS compliant

SST26VF032BEUI-104I/SM属于集成电路（IC） > 存储器。微芯科技股份有限公司制造生产的SST26VF032BEUI-104I/SM存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。