Product Description

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin-count package. SST26VF016BEUI also supports

full command-set compatibility to traditional Serial

Peripheral Interface (SPI) protocol. System designs

using SQI flash devices occupy less board space and

ultimately lower system costs.

All members of the 26 Series, SQI family are manufactured

with proprietary, high-performance CMOS Super-

Flash® technology. The split-gate cell design and thickoxide

tunneling injector attain better reliability and manufacturability

compared with alternate approaches.

SST26VF016BEUI significantly improves performance

and reliability, while lowering power consumption.

These devices write (Program or Erase) with a single

power supply of 2.3-3.6V. The total energy consumed

is a function of the applied voltage, current, and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy consumed

during any Erase or Program operation is less

than alternative flash memory technologies.

SST26VF016BEUI is offered in 8-lead SOIC (3.90

mm). See Figure 2-1 for pin assignments.

Features

• Factory-Programmed with EUI-48 and EUI-64

Globally Unique Identifier

- Secure, read-only access in Serial Flash

Discoverable Parameter (SFDP) table

• Single Voltage Read and Write Operations

- 2.7-3.6V or 2.3-3.6V

• Serial Interface Architecture

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- Mode 0 and Mode 3

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

• High Speed Clock Frequency

- 2.7-3.6V: 104 MHz max

- 2.3-3.6V: 80 MHz max

• Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

• Superior Reliability

- Endurance: 100,000 Cycles (min)

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby Current: 15 μA (typical)

• Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25 ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

- Software polling the BUSY bit in status register

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay blocks

- Uniform 64 KByte overlay blocks

• Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection

- Individual-Block Write Protection with permanent

lock-down capability

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

- Read Protection on top and bottom 8 KByte

parameter blocks

• Security ID

- One-Time Programmable (OTP) 2 KByte,

Secure ID

- 64 bit unique, factory pre-programmed

identifier

- User-programmable area

• Temperature Range

- Industrial: -40°C to +85°C

• Automotive AECQ-100 Qualified

• Packages Available

- 8-lead SOIC (3.90 mm)

• All devices are RoHS compliant

SST26VF016BEUIT-104I/SN属于集成电路（IC） > 存储器。微芯科技股份有限公司制造生产的SST26VF016BEUIT-104I/SN存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。