SST25VF080B-50-4C-S2AF-T集成电路（IC）的存储器规格书PDF中文资料

SST25VF080B-50-4C-S2AF-T属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的SST25VF080B-50-4C-S2AF-T存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description

25 series Serial Flash family features a four-wire,

SPI-compatible interface that allows for a low pin-count

package which occupies less board space and ultimately

lowers total system costs. The SST25VF080B

devices are enhanced with improved operating frequency

and lower power consumption. SST25VF080B

SPI serial flash memories are manufactured with proprietary,

high-performance CMOS SuperFlash® technology.

The split-gate cell design and thick-oxide

tunneling injector attain better reliability and manufacturability

compared with alternate approaches.

The SST25VF080B devices significantly improve performance

and reliability, while lowering power consumption.

The devices write (program or erase) with a

single power supply of 2.7V-3.6V for SST25VF080B.

The total energy consumed is a function of the applied

voltage, current, and time of application. Since for any

given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time,

the total energy consumed during any erase or program

operation is less than alternative flash memory technologies.

Features

• Single Voltage Read and Write Operations

- 2.7V-3.6V

• Serial Interface Architecture:

- SPI Compatible: Mode 0 and Mode 3

• High-Speed Clock Frequency:

- Up to 66 MHz

• Superior Reliability:

- Endurance: 100,000 Cycles (typical)

- Greater than 100 years Data Retention

• Low-Power Consumption:

- Active Read Current: 10 mA (typical)

- Standby Current: 5 μA (typical)

• Flexible Erase Capability:

- Uniform 4-Kbyte sectors

- Uniform 32-Kbyte overlay blocks

- Uniform 64-Kbyte overlay blocks

• Fast Erase and Byte Program:

- Chip Erase Time: 35 ms (typical)

- Sector/Block Erase Time: 18 ms (typical)

- Byte Program Time: 7 μs (typical)

• Auto Address Increment (AAI) Programming:

- Decrease total chip programming time over

Byte Program operations

• End of Write Detection:

- Software polling the BUSY bit in STATUS

Register

- Busy Status readout on SO pin in AAI Mode

• Hold Pin (HOLD#):

- Suspends a serial sequence to the memory

without deselecting the device

• Write Protection (WP#):

- Enables/Disables the Lock-Down function of

the STATUS register

• Software Write Protection:

- Write protection through Block Protection bits

in STATUS register

• Temperature Range:

- Commercial: 0°C to +70°C

- Industrial: -40°C to +85°C

• All devices are RoHS compliant