SST25PF020B-80-4C-Q3AE-T集成电路（IC）的存储器规格书PDF中文资料

SST25PF020B-80-4C-Q3AE-T属于集成电路（IC）的存储器。由美国微芯科技公司制造生产的SST25PF020B-80-4C-Q3AE-T存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Product Description

The 25 series Serial Flash family features a four-wire,

SPI compatible interface that allows for a low pin-count

package which occupies less board space and ultimately

lowers total system costs. The SST25PF020B

devices are enhanced with improved operating frequency

and even lower power consumption.

SST25PF020B SPI serial Flash memories are manufactured

with proprietary, high-performance CMOS

SuperFlash® technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST25PF020B devices significantly improve performance

and reliability, while lowering power consumption.

The devices write (Program or Erase) with a

single power supply of 2.3V-3.6V for SST25PF020B.

The total energy consumed is a function of the applied

voltage, current and time of application. Since for any

given voltage range the SuperFlash technology uses

less current to program and has a shorter erase time,

the total energy consumed during any erase or program

operation is less than alternative Flash memory technologies.

特性 Features

• Single Voltage Read and Write Operations:

- 2.3V-3.6V

• Serial Interface Architecture:

- SPI Compatible: Mode 0 and Mode 3

• High-Speed Clock Frequency:

- 80 MHz (2.7V-3.6V operation)

- 50 MHz (2.3V-2.7V operation)

• Superior Reliability:

- Endurance: 100,000 cycles (typical)

- Greater than 100 years data retention

• Low-Power Consumption:

- Active Read current: 10 mA (typical)

- Standby current: 5 μA (typical)

• Flexible Erase Capability:

- Uniform 4-Kbyte sectors

- Uniform 32-Kbyte overlay blocks

- Uniform 64-Kbyte overlay blocks

• Fast Erase and Byte Program:

- Chip Erase time: 35 ms (typical)

- Sector/Block Erase time: 18 ms (typical)

- Byte Program time: 7 μs (typical)

• Auto Address Increment (AAI) Programming:

- Decrease total chip programming time over

Byte Program operations

• End-of-Write Detection:

- Software polling the BUSY bit in STATUS

register

- Busy Status readout on SO pin in AAI Mode

• Hold Pin (HOLD#):

- Suspends a serial sequence to the memory

without deselecting the device

• Write Protection (WP#):

- Enables/Disables the Lock-Down function of

the STATUS register

• Software Write Protection:

- Write protection through Block Protection bits

in STATUS register

• Temperature Range:

- Commercial: 0°C to +70°C

• All devices are RoHS compliant