SST12LP08-QXBE

The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, it typically provides 30 dB gain with 34% power-added efficien High Gain:– Typically 30 dB gain across 2.4~2.5 GHz over temperature0°C to +85°C\nHigh linear output power:– >28 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 23.5 dBm– ~3% added EVM up to 20 dBm for 54 Mbps 802.11g signal– Meets 802.11b ACPR requirement up to 23.5 dBm\nHigh power-added ef;

Microchip

微芯科技

Package：12-XFQFN 裸露焊盘；包装：盒 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP 802.11B/G/N 2.4GHZ 12QFN

Microchip

微芯科技

2.4 GHz High-Power, High-Gain Power Amplifier

文件：1.10837 Mbytes 页数：18 Pages

SST

Silicon Storage Technology, Inc

2.4 GHz High-Power, High-Gain Power Amplifier Module

文件：236.3 Kbytes 页数：2 Pages

SST

Silicon Storage Technology, Inc