SSP4N60B中文资料600V N-Channel MOSFET数据手册ONSEMI规格书
SSP4N60B规格书详情
描述 Description
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
特性 Features
• 4.0A, 600V, RDS(on)= 2.5Ω@VGS= 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV (Note 6)
技术参数
- 型号:
SSP4N60B
- 功能描述:
MOSFET N-Ch/600V/4a/2.50hm
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
285 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO-220 |
155440 |
明嘉莱只做原装正品现货 |
询价 | ||
FAIRCHILD/仙童 |
21+ |
TO220 |
1709 |
询价 | |||
FSC |
25+ |
DIP-8 |
18000 |
原厂直接发货进口原装 |
询价 | ||
SEC |
07+ |
TO-220 |
193 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO220 |
50 |
大批量供应优势库存热卖 |
询价 | ||
FAIRCHILD |
2025+ |
TO-220 |
4675 |
全新原厂原装产品、公司现货销售 |
询价 | ||
FSC |
24+ |
TO220 |
20000 |
一级代理原装现货假一罚十 |
询价 | ||
FAIRCHILD/仙童 |
2223+ |
TO-220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
FAIRCILD |
22+ |
TO-220 |
3000 |
原装正品,支持实单 |
询价 |