丝印：S5；Package：ES6；MOSFETs Silicon N-Channel MOS

Applications • High-Speed Switching Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) = 840 mΩ (max) (@

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TOSHIBA

东芝

Small-signal MOSFET 2 in 1

Application Scope：High-Speed Switching\n\nPolarity：N-ch×2\n\nGeneration：U-MOSⅦ-H\n\nInternal Connection：Independent\n\nComponent Product (Q1)：SSM6N56FE\n\nComponent Product (Q2)：SSM6N56FE\n\nRoHS Compatible Product(s) (#)：Please contact us.

Toshiba

东芝

SUPER超致
TO-220

SUPER超致

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DDC
SOP

DDC

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仙童
TO-220

仙童

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