丝印：NN3；Package：UF6；MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (t

文件：381.57 Kbytes 页数：8 Pages

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东芝

MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (t

文件：381.57 Kbytes 页数：8 Pages

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (t

文件：381.57 Kbytes 页数：8 Pages

TOSHIBA

东芝

Surface-Mount PAR® Transient Voltage Suppressors

FEATURES • Low-profile package - typical height of 0.88 mm • Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection) • Ideal for automated placement • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 18

文件：182.31 Kbytes 页数：6 Pages

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