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SSM6L39TU

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

SSM6L39TU

PowerManagementSwitchApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TA6L39A

SurfaceMountPAR®TransientVoltageSuppressors

FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell

VishayVishay Siliconix

威世科技威世科技半导体

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