Advanced Power MOSFET

BVDSS = 800 V RDS(on) = 1.3 Ω ID = 9 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.000 Ω (Typ.)

文件：251.2 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

文件：273.34 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

9 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy

文件：178.37 Kbytes 页数：5 Pages

UTC

友顺

9A, 800V N-CHANNEL POWER MOSFET

文件：203.39 Kbytes 页数：5 Pages

UTC

友顺

Fast Switching Speed

文件：58.2 Kbytes 页数：2 Pages

ISC

无锡固电