丝印：Q07N10；Package：SOP-8；N-Ch Enhancement Mode Power MOSFET

文件：282.48 Kbytes 页数：3 Pages

SECOS

喜可士

MosFET

Secos

喜可士

N-Ch MOSFET

文件：1.11144 Mbytes 页数：5 Pages

WIINSOK

微硕半导体

N-Channel MOSFET uses advanced trench technology

文件：1.32747 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel Power MOSFET

文件：1.41973 Mbytes 页数：5 Pages

JIANGSU

长电科技

Plastic-Encapsulate MOSFETS

DESCRIPTION The device is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . 100 EAS guaranteed with full function reliability approved. FEATURES  Advanced hig

文件：430.32 Kbytes 页数：4 Pages

GWSEMI

唯圣电子