800V N-Channel Super-Junction MOSFET Gen-Ⅱ

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.\nThis advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with • Multi-Epi process SJ-FET\n• 850V @TJ = 150 ℃\n• Typ. RDS(on) = 0.77Ω\n• Ultra Low Gate Charge (typ. Qg = 13nC)\n• 100% avalanche tested\n• Integrated Zener diode for high ESD robustness;

Super

超致半导体

TO-263

SILIKRON

新硅能微电子

上传：深圳市晨豪科技有限公司

SOP-8

SECOS

喜可士

上传：深圳市凌旭科技有限公司

N/A

JST

JST集团

上传：深圳市云泰半导体科技有限公司二部

N/A

JST

JST集团

上传：深圳权泰科技有限公司