SSF65R190S2数据手册Super中文资料规格书

描述 Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

特性 Features

• Multi-Epi process SJ-FET
• 700V @TJ = 150 ℃
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 36.5nC)
• 100% avalanche tested