超结MOS，多层外延工艺

• Multi-Epi process SJ-FET • Fast-Recovery body diode • Extremely Low Reverse Recovery Charge • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.24Ω • Ultra Low Gate Charge (typ. Qg = 23nC) • 100%_avalanche tested

文件：1.134682 Mbytes 页数：14 Pages

super

超致半导体

PDF上传者：上海闻业电子科技有限公司

SJ-FRMOS

Super

超致半导体

600V Super Junction Power MOSFET Gen-Ⅱ With Fast-Recovery

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.\nThis advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with • Multi-Epi process SJ-FET\n• Fast-Recovery body diode\n• Extremely Low Reverse Recovery Charge\n• 650V @TJ = 150 ℃\n• Typ. RDS(on) = 0.24Ω\n• Ultra Low Gate Charge (typ. Qg = 24nC)\n• 100% avalanche tested;

Super

超致半导体

600V CoolMOS짧 CE Power Transistor

文件：1.01271 Mbytes 页数：14 Pages

Infineon

英飞凌

600V 0.28ohm N-channel MOSFET

文件：1.16753 Mbytes 页数：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：323.21 Kbytes 页数：2 Pages

ISC

无锡固电