600V N-Channel Super-Junction MOSFET Gen-Ⅱ

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.\nThis advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with • Multi-Epi process SJ-FET\n• 650V @TJ = 150 ℃\n• Typ. RDS(on) = 0.23Ω\n• Ultra Low Gate Charge (typ. Qg = 21nC)\n• 100% avalanche tested;

Super

超致半导体

TO-220

SUPER超致

上传：深圳市乐创天科技有限公司

TO-220F

SUPER超致

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TO-220

SILIKRON

新硅能微电子

上传：深圳市晨豪科技有限公司

TO220

SILSKRON

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